Rochester IRF740B

Manufacturer No:

IRF740B

Manufacturer:

Rochester

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 540m ? @ 5A, 10V ±30V 1.8pF @ 25V 53nC @ 10V 400V TO-220-3

Quantity:

In Stock :2898

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF740B Information

Rochester IRF740B technical specifications, attributes, parameters and parts with similar specifications to Rochester IRF740B.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Surface Mount
NO

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

Terminal Finish
MATTE TIN

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
unknown

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

JESD-30 Code
R-PSFM-T3

Qualification Status
COMMERCIAL

Download datasheets and manufacturer documentation for Rochester IRF740B.

Datasheets:

rochesterelectronicsllc-irf740b-datasheets-7338.pdf

rochesterelectronicsllc-irf630-datasheets-5182.pdf

IRF740B Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.