VISHAY IRF740ASTRRPBF
Manufacturer No:
IRF740ASTRRPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 550mOhm @ 6A, 10V ±30V 1030pF @ 25V 36nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :9269
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IRF740ASTRRPBF Information
VISHAY IRF740ASTRRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF740ASTRRPBF.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Supplier Device Package
- D2PAK
- Weight
- 1.437803g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2016
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 550MOhm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 3.1W Ta 125W Tc
- Element Configuration
- Single
- Turn On Delay Time
- 10 ns
Download datasheets and manufacturer documentation for VISHAY IRF740ASTRRPBF.
Datasheets:
RohsStatement:
IRF740ASTRRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1030pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 24 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 550mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF740ASTRRPBF Features
a continuous drain current (ID) of 10A
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740ASTRRPBF Applications
There are a lot of Vishay Siliconix
IRF740ASTRRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
IRF740ASTRRPBF Relevant information
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