

VISHAY IRF740ASTRLPBF
Manufacturer No:
IRF740ASTRLPBF
Manufacturer:
Package:
SMALL OUTLINE, R-PSSO-G2
Description:
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Quantity:


In Stock :5365
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IRF740ASTRLPBF Information
VISHAY IRF740ASTRLPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF740ASTRLPBF.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Transferred
- Ihs Manufacturer
- VISHAY SILICONIX
- Part Package Code
- D2PAK
- Package Description
- SMALL OUTLINE, R-PSSO-G2
- Pin Count
- 4
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Vishay
- Avalanche Energy Rating (Eas)
- 630 mJ
- Type
- Parameter
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 400 V
- Drain Current-Max (ID)
- 10 A
- Drain-source On Resistance-Max
- 0.55 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-263AB
- JESD-30 Code
- R-PSSO-G2
- JESD-609 Code
- e3
- Number of Elements
- 1
- Number of Terminals
- 2
Download datasheets and manufacturer documentation for VISHAY IRF740ASTRLPBF.
Datasheets:
RohsStatement:
IRF740ASTRLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1030pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 550mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF740ASTRLPBF Features
a continuous drain current (ID) of 10A
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740ASTRLPBF Applications
There are a lot of Vishay Siliconix
IRF740ASTRLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IRF740ASTRLPBF Relevant information
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