

INFINEON IRF7406TRPBF
Manufacturer No:
IRF7406TRPBF
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
P-Channel Tape & Reel (TR) 45m Ω @ 2.8A, 10V ±20V 1100pF @ 25V 59nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:


In Stock :4652
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7406TRPBF Information
INFINEON IRF7406TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7406TRPBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 5.8A Ta
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V 10V
- Number of Elements
- 1
- Type
- Parameter
- Power Dissipation (Max)
- 2.5W Ta
- Turn Off Delay Time
- 45 ns
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2004
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
Download datasheets and manufacturer documentation for INFINEON IRF7406TRPBF.
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
IRF7406TRPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to produce the lowest feasible on-resistance per silicon area. This benefit gives the designer an incredibly efficient device for usage in a multitude of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The SO-8 is excellent for a range of power applications because to modifications made to its leadframe, including improved thermal performance and multiple-die support. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, power dissipation of more than 0.8W is achievable.
IRF7406TRPBF Features
? Technology Generation No Logic
? Extremely Low Resistance
? Mosfet P-Channel
? Mount Surface
? Available on reel-to-reel tape
? Rating Dynamic dv/dt
? Quick Switching
? Lead-Free
IRF7406TRPBF Applications
Switching applications
IRF7406TRPBF Relevant information
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