INFINEON IRF7403TRPBF

Manufacturer No:

IRF7403TRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22m ? @ 4A, 10V ±20V 1200pF @ 25V 57nC @ 10V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :2989

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 8 - Sat, May 9, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7403TRPBF Information

INFINEON IRF7403TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7403TRPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Contact Plating
Tin

Mount
Surface Mount, Through Hole

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Published
1997

Series
HEXFET®

Type
Parameter

Packaging
Tape & Reel (TR)

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
8

Resistance
22mOhm

Additional Feature
LOGIC LEVEL COMPATIBLE

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Download datasheets and manufacturer documentation for INFINEON IRF7403TRPBF.

IRF7403TRPBF Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.5A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [6.7A] according to its drain current.It is [42 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).