INFINEON IRF7324D1TRPBF

Manufacturer No:

IRF7324D1TRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 270mOhm @ 1.2A, 4.5V ±12V 260pF @ 15V 7.8nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :2969

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7324D1TRPBF Information

INFINEON IRF7324D1TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7324D1TRPBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Supplier Device Package
8-SO

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
FETKY?

Published
2004

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Voltage - Rated DC
-20V

Technology
MOSFET (Metal Oxide)

Current Rating
-2.9A

Number of Elements
1

Power Dissipation-Max
2W Ta

Power Dissipation
2W

FET Type
P-Channel

Download datasheets and manufacturer documentation for INFINEON IRF7324D1TRPBF.

Datasheets:

infineon-irf7324d1trpbf-datasheets-4858.pdf

infineon-irf7324d1trpbf-datasheets-4859.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF7324D1TRPBF Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 270mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.7V 4.5V).

IRF7324D1TRPBF Features

a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 270mOhm
a 20V drain to source voltage (Vdss)