VISHAY IRF730S
Manufacturer No:
IRF730S
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 1Ohm @ 3.3A, 10V ±20V 700pF @ 25V 38nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :2562
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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IRF730S Information
VISHAY IRF730S technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF730S.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Supplier Device Package
- D2PAK
- Weight
- 1.437803g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2016
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 400V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 5.5A
- Number of Channels
- 1
- Power Dissipation-Max
- 3.1W Ta 74W Tc
- Element Configuration
- Single
- Power Dissipation
- 74W
Download datasheets and manufacturer documentation for VISHAY IRF730S.
Datasheets:
RohsStatement:
IRF730S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.This device has a drain-to-source resistance of 1Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF730S Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)
IRF730S Applications
There are a lot of Vishay Siliconix
IRF730S applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
IRF730S Relevant information
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