VISHAY IRF730APBF
Manufacturer No:
IRF730APBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 1Ohm @ 3.3A, 10V ±30V 600pF @ 25V 22nC @ 10V 400V TO-220-3
Quantity:


In Stock :4289
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF730APBF Information
VISHAY IRF730APBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF730APBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Supplier Device Package
- TO-220AB
- Weight
- 6.000006g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Type
- Parameter
- Published
- 2008
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 1Ohm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 400V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 5.5A
- Number of Elements
- 1
Download datasheets and manufacturer documentation for VISHAY IRF730APBF.
Datasheets:
Other Related Documents:
RohsStatement:
IRF730APBF Description
The IRF730APBF is a Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
IRF730APBF Features
Fully Characterized Capacitance and Avalanche Voltage and Current
Effective Coss Specified
Compliant to RoHS Directive 2002/95/EC
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
IRF730APBF Applications
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
IRF730APBF Relevant information
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