INFINEON IRF6608
Manufacturer No:
IRF6608
Manufacturer:
INFINEON
Package:
DirectFET? Isometric ST
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 9m ? @ 13A, 10V ±12V 2120pF @ 15V 24nC @ 4.5V 30V DirectFET? Isometric ST
Quantity:
In Stock :9129
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF6608 Information
INFINEON IRF6608 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF6608.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET? Isometric ST
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 3 (168 Hours)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 2.1W Ta 42W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 9m ? @ 13A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 2120pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 13A Ta 55A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±12V
Download datasheets and manufacturer documentation for INFINEON IRF6608.
Datasheets:
Other Related Documents:
IRF6608 Description
In order to achieve the lowest on-state resistance in a package with the footprint of a MICRO-8 and only a 0.7 mm profile, the IRF6608 blends the most recent HEXFET? Power MOSFET Silicon technology with the most modern DirectFETTM packaging. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling to increase thermal transfer in power systems, improving the best thermal resistance by 80% over the prior model. The IRF6608 minimizes switching and conduction losses by balancing low resistance, low charge, and ultra-low package inductance. This device is perfect for high-efficiency DC-DC converters that power the most recent generation of processors that operate at higher frequencies due to the decreased total losses. The IRF6608 has been designed for synchronous buck converter performance-critical parameters such as Rds(on), gate charge, and Cdv/dt-induced turn-on immunity. To reduce losses in the control FET socket, the IRF6608 has been improved for parameters like Rds(on) and gate charge that is crucial in synchronous buck converters.
IRF6608 Features
Low Switching Losses
Low Profile (<0.7 mm)
Low Conduction Losses
Application Specific MOSFETs
Dual-Sided Cooling Compatible
Ideal for CPU Core DC-DC Converters
Compatible with existing Surface Mount Techniques
IRF6608 Applications
Enterprise systems
Personal electronics
Communications equipment
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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