VISHAY IRF634NPBF

Manufacturer No:

IRF634NPBF

Manufacturer:

VISHAY

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 435mOhm @ 4.8A, 10V ±20V 620pF @ 25V 34nC @ 10V 250V TO-220-3

Quantity:

In Stock :4650

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

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Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF634NPBF Information

VISHAY IRF634NPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF634NPBF.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Supplier Device Package
TO-220AB

Weight
6.000006g

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Published
2009

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Channels
1

Power Dissipation-Max
3.8W Ta 88W Tc

Element Configuration
Single

Turn On Delay Time
8.4 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
435mOhm @ 4.8A, 10V

Download datasheets and manufacturer documentation for VISHAY IRF634NPBF.

Datasheets:

vishaysiliconix-irf634nlpbf-datasheets-0021.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRF634NPBF Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 435mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).