ONSEMI IRF630B_FP001
Manufacturer No:
IRF630B_FP001
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 4.5A, 10V ±30V 720pF @ 25V 29nC @ 10V 200V TO-220-3
Quantity:
In Stock :8628
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF630B_FP001 Information
ONSEMI IRF630B_FP001 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI IRF630B_FP001.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 72W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 720pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 9A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 29nC @ 10V
- Drain to Source Voltage (Vdss)
- 200V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for ONSEMI IRF630B_FP001.
IRF630B_FP001 Overview
A device's maximum input capacitance is 720pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF630B_FP001 Features
a 200V drain to source voltage (Vdss)
IRF630B_FP001 Applications
There are a lot of ON Semiconductor
IRF630B_FP001 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
