INFINEON IRF540ZSTRRPBF

Manufacturer No:

IRF540ZSTRRPBF

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 26.5m ? @ 22A, 10V ±20V 1770pF @ 25V 63nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :1268

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Shipped from：HK Warehouse

Expected Shipping：Tue, May 19 - Wed, May 20, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF540ZSTRRPBF Information

INFINEON IRF540ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF540ZSTRRPBF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2010

JESD-609 Code
e3

Part Status
Discontinued

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for INFINEON IRF540ZSTRRPBF.

IRF540ZSTRRPBF Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The maximum input capacitance of this device is 1770pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 36A.There is no pulsed drain current maximum for this device based on its rated peak drain current 140A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.