VISHAY IRF530STRRPBF

Manufacturer No:

IRF530STRRPBF

Manufacturer:

VISHAY

Package:

SMALL OUTLINE, R-PSSO-G2

Description:

Description: Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Quantity:

In Stock :4271

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF530STRRPBF Information

VISHAY IRF530STRRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF530STRRPBF.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Transferred

Ihs Manufacturer
VISHAY SILICONIX

Part Package Code
D2PAK

Package Description
SMALL OUTLINE, R-PSSO-G2

Pin Count
4

Reach Compliance Code
compliant

ECCN Code
EAR99

Samacsys Manufacturer
Vishay

Additional Feature
AVALANCHE RATED

Type
Parameter

Avalanche Energy Rating (Eas)
69 mJ

Case Connection
DRAIN

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
100 V

Drain Current-Max (ID)
14 A

Drain-source On Resistance-Max
0.16 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code
TO-263AB

JESD-30 Code
R-PSSO-G2

JESD-609 Code
e3

Download datasheets and manufacturer documentation for VISHAY IRF530STRRPBF.

Datasheets:

SILXS27949-1.pdf

IRF530STRRPBF Overview

A device's maximum input capacitance is 670pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 160mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.