

INFINEON IRF530NSTRRPBF
Manufacturer No:
IRF530NSTRRPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
N-Channel Tape & Reel (TR) 90m Ω @ 9A, 10V ±20V 920pF @ 25V 37nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :6477
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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IRF530NSTRRPBF Information
INFINEON IRF530NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF530NSTRRPBF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 17A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 3.8W Ta 70W Tc
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Type
- Parameter
- Series
- HEXFET®
- Published
- 2004
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for INFINEON IRF530NSTRRPBF.
Other Related Documents:
PCN Design/Specification:
PCN Assembly/Origin:
PCN Packaging:
PCN Part Status Change:
IRF530NSTRRPBF Overview
An avalanche break down occurs, and the applied energy is called avalanche energy, with a rating of 93 mJ Avalanche energy.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 920pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 17A.Peak drain current is 60A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).
IRF530NSTRRPBF Features
the avalanche energy rating (Eas) is 93 mJ
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)
IRF530NSTRRPBF Applications
There are a lot of Infineon Technologies
IRF530NSTRRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
IRF530NSTRRPBF Relevant information
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