

INFINEON IRF530NS
Manufacturer No:
IRF530NS
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
N-Channel Tube 90m Ω @ 9A, 10V ±20V 920pF @ 25V 37nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :2365
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Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF530NS Information
INFINEON IRF530NS technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF530NS.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 17A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 3.8W Ta 70W Tc
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Type
- Parameter
- Series
- HEXFET®
- Published
- 2002
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- AVALANCHE RATED
- HTS Code
- 8541.29.00.95
Download datasheets and manufacturer documentation for INFINEON IRF530NS.
Other Related Documents:
IRF530NS Description
The IRF530NS is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRF530NS Features
Advanced process technology
Ultra-low ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
IRF530NS Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRF530NS Relevant information
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