

INFINEON IRF5305LPBF
Manufacturer No:
IRF5305LPBF
Manufacturer:
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) P-Channel Tube 60mOhm @ 16A, 10V ±20V 1200pF @ 25V 63nC @ 10V 55V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:


In Stock :6417
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF5305LPBF Information
INFINEON IRF5305LPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF5305LPBF.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins
- 3
- Supplier Device Package
- TO-262
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2003
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 60mOhm
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 3.8W Ta 110W Tc
- Power Dissipation
- 110W
- Turn On Delay Time
- 14 ns
- FET Type
- P-Channel
Download datasheets and manufacturer documentation for INFINEON IRF5305LPBF.
Datasheets:
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IRF5305LPBF Description
The IRF5305LPBF power MOSFETs employ tried-and-true silicon manufacturing techniques, providing designers with a broad range of products to serve several applications, including battery-powered devices, DC motors, and inverters, SMPS, lighting, load switches, and illumination. For ease of design, IRF5305LPBF MOSFETs come in a choice of surface mount and through-hole packages with standardized industry footprints.
IRF5305LPBF Features
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 66 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO-262
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current rating
IRF5305LPBF Applications
Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
Fast Switching Applications
Motor Control Applications
IRF5305LPBF Relevant information
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