ST IRF530
ST IRF530

ST IRF530

Manufacturer No:

IRF530

Manufacturer:

ST

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 160m ? @ 7A, 10V ±20V 458pF @ 25V 21nC @ 10V TO-220-3

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF530 Information

ST IRF530 technical specifications, attributes, parameters and parts with similar specifications to ST IRF530.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tube
  • Series
  • STripFET? II
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Type
  • Parameter
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Subcategory
  • FET General Purpose Power
  • Voltage - Rated DC
  • 100V
  • Technology
  • MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Reach Compliance Code
  • not_compliant
  • Current Rating
  • 14A
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED

Download datasheets and manufacturer documentation for ST IRF530.

IRF530 Description


The IRF530 is an N-channel MOSFET that is intended for high-speed and high-power applications. It can withstand 14 A of continuous current and 100 V of voltage. It can drive a load of up to 56 A in pulse mode. Other transistors in this series with somewhat different specs are available, such as IRF531, IRF532, and IRF533.



IRF530 Features


  • Dynamic dv/dt rating

  • Fast switching

  • Ease of paralleling

  • The required simple drive circuit

  • Repetitive avalanche rated

  • Maximum Drain-to-source voltage VDS: 100V

  • Maximum continuous drain current ID: 14A

  • Pulse drain current: 56A

  • Maximum power dissipation: 88W

  • Maximum gate-to-source voltage: ±20V

  • Peak diode recovery dv/dt: 5.5V/ns

  • On-state resistance: 0.16?

  • Total gate charge Qg: 26nC

  • Operating junction and storage temperature range: -55?C to +175?C

  • Package: TO-220AB

  • Transistor Polarity: N-channel



IRF530 Applications


  • Battery management system and battery chargers

  • Motor drives

  • Solar power supply applications

  • UPS

  • DC-DC and DC-AC Converters

  • Regulators

  • Audio amplifier

  • Solenoid and relay drivers


In Stock :Available

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Shipped from:HK Warehouse
Expected Shipping:Mon, Apr 20 - Tue, Apr 21, 2026
Date Code:Within 2 Years

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