

INFINEON IRF5210SPBF
Manufacturer No:
IRF5210SPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
P-Channel Tube 60m Ω @ 38A, 10V ±20V 2780pF @ 25V 230nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :Available
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF5210SPBF Information
INFINEON IRF5210SPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF5210SPBF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 38A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 3.1W Ta 170W Tc
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Type
- Parameter
- Series
- HEXFET®
- Published
- 1998
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature
- HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
- HTS Code
- 8541.29.00.95
Download datasheets and manufacturer documentation for INFINEON IRF5210SPBF.
Other Related Documents:
PCN Design/Specification:
PCN Assembly/Origin:
PCN Packaging:
IRF5210SPBF Description
The IRF5210SPBF is a -100V single P-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. Its features combine to make this design an extremely efficient and reliable device for a wide variety of other applications.
IRF5210SPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRF5210SPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRF5210SPBF Relevant information
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