INFINEON IRF520NSTRL
INFINEON IRF520NSTRL

INFINEON IRF520NSTRL

Manufacturer No:

IRF520NSTRL

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 200m ? @ 5.7A, 10V ±20V 330pF @ 25V 25nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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In Stock :6547

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Shipped from:HK Warehouse
Expected Shipping:Thu, May 7 - Fri, May 8, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF520NSTRL Information

INFINEON IRF520NSTRL technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF520NSTRL.

  • Type
  • Parameter
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Surface Mount
  • YES
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • HEXFET®
  • Published
  • 1998
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 2
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
  • AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260

Download datasheets and manufacturer documentation for INFINEON IRF520NSTRL.

IRF520NSTRL Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 91 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 330pF @ 25V.9.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 38A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF520NSTRL Features


the avalanche energy rating (Eas) is 91 mJ
based on its rated peak drain current 38A.
a 100V drain to source voltage (Vdss)


IRF520NSTRL Applications


There are a lot of Infineon Technologies
IRF520NSTRL applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification