

INFINEON IRF520NS
Manufacturer No:
IRF520NS
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 200m ? @ 5.7A, 10V ±20V 330pF @ 25V 25nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :5444
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF520NS Information
INFINEON IRF520NS technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF520NS.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 1995
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- HTS Code
- 8541.29.00.75
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 225
Download datasheets and manufacturer documentation for INFINEON IRF520NS.
Other Related Documents:
IRF520NS Description
IRF520NS is a 100v HEXFET? Power MOSFET. The IRF520NS HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety
of applications.
IRF520NS Features
Advanced Process Technology
Surface Mount (IRF520NS)
Low-profile through-hole (IRF520NL)
175°C Operating TemperaturelFast Switching
Fully Avalanche Rated
IRF520NS Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
IRF520NS Relevant information
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