INFINEON IRF3709ZCSTRL
INFINEON IRF3709ZCSTRL

INFINEON IRF3709ZCSTRL

Manufacturer No:

IRF3709ZCSTRL

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.3m ? @ 21A, 10V ±20V 2130pF @ 15V 26nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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In Stock :6014

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Expected Shipping:Mon, May 25 - Tue, May 26, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

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Step5:Anti-collision Filling

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Step6:Packaging Box

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF3709ZCSTRL Information

INFINEON IRF3709ZCSTRL technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3709ZCSTRL.

  • Type
  • Parameter
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Surface Mount
  • YES
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • HEXFET®
  • Published
  • 2004
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 2
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn) - with Nickel (Ni) barrier
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • JESD-30 Code
  • R-PSSO-G2

Download datasheets and manufacturer documentation for INFINEON IRF3709ZCSTRL.

IRF3709ZCSTRL Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2130pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 42A.Peak drain current is 350A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IRF3709ZCSTRL Features


the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 350A.
a 30V drain to source voltage (Vdss)


IRF3709ZCSTRL Applications


There are a lot of Infineon Technologies
IRF3709ZCSTRL applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies