

INFINEON IRF3708S
Manufacturer No:
IRF3708S
Manufacturer:
INFINEON
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 12m ? @ 15A, 10V ±12V 2417pF @ 15V 24nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :3989
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF3708S Information
INFINEON IRF3708S technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3708S.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2000
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Type
- Parameter
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Power Dissipation-Max
- 87W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 12m ? @ 15A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 2417pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 62A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 2.8V 10V
Download datasheets and manufacturer documentation for INFINEON IRF3708S.
Other Related Documents:
IRF3708S Description
IRF3708S is a 30v HEXFET? Power MOSFET manufactured by Infineon. The Infineon MOSFET IRF3708S can be used for High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use and High-Frequency Buck Converters for Computer Processor Power due to the following features. The Operating and Storage Temperature Range is between -55 and 175?. And the MOSFET IRF3708S is in the D2Pak package with 87W power dissipation.
IRF3708S Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Drain-Source Voltage: 30V
Gate-to-Source Voltage: ±12V
IRF3708S Applications
Lighting
Computation and communication
Electromechanical systems
Renewable generation
High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use
High-Frequency Buck Converters for Computer Processor Power
IRF3708S Relevant information
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