INFINEON IRF3707ZPBF

Manufacturer No:

IRF3707ZPBF

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 9.5mOhm @ 21A, 10V ±20V 1210pF @ 15V 15nC @ 4.5V 30V TO-220-3

Quantity:

In Stock :4818

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 25 - Tue, May 26, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF3707ZPBF Information

INFINEON IRF3707ZPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3707ZPBF.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Supplier Device Package
TO-220AB

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2003

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
9.5Ohm

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Current Rating
59A

Number of Elements
1

Power Dissipation-Max
57W Tc

Power Dissipation
57W

Download datasheets and manufacturer documentation for INFINEON IRF3707ZPBF.

Datasheets:

infineontechnologies-irf3707zspbf-datasheets-8539.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF3707ZPBF Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1210pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 59A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12.5mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IRF3707ZPBF Features

a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 12.5mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)