INFINEON IRF3707ZLPBF

Manufacturer No:

IRF3707ZLPBF

Manufacturer:

INFINEON

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 9.5mOhm @ 21A, 10V ±20V 1210pF @ 15V 15nC @ 4.5V 30V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

In Stock :3371

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 25 - Tue, May 26, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF3707ZLPBF Information

INFINEON IRF3707ZLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3707ZLPBF.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins
3

Supplier Device Package
TO-262

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2008

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Current Rating
59A

Number of Elements
1

Power Dissipation-Max
57W Tc

Power Dissipation
57W

Turn On Delay Time
9.8 ns

Download datasheets and manufacturer documentation for INFINEON IRF3707ZLPBF.

Datasheets:

infineontechnologies-irf3707zspbf-datasheets-8539.pdf

infineon-irf3707zlpbf-datasheets-7126.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF3707ZLPBF Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1210pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 59A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.This device has a drain-to-source resistance of 12.5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IRF3707ZLPBF Features

a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 12.5mOhm
a 30V drain to source voltage (Vdss)