INFINEON IRF3707SPBF

Manufacturer No:

IRF3707SPBF

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tube 12.5mOhm @ 15A, 10V ±20V 1990pF @ 15V 19nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :2258

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Mon, May 25 - Tue, May 26, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF3707SPBF Information

INFINEON IRF3707SPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3707SPBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Supplier Device Package
D2PAK

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2000

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Termination
SMD/SMT

Resistance
12.5MOhm

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Current Rating
62A

Number of Elements
1

Power Dissipation-Max
87W Tc

Download datasheets and manufacturer documentation for INFINEON IRF3707SPBF.

Datasheets:

infineontechnologies-irf3707pbf-datasheets-8617.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF3707SPBF Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1990pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 11.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 17mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IRF3707SPBF Features

a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.8 ns
single MOSFETs transistor is 17mOhm
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)