INFINEON IRF3205LPBF

Manufacturer No:

IRF3205LPBF

Manufacturer:

INFINEON

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

N-Channel Tube 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

In Stock :2902

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF3205LPBF Information

INFINEON IRF3205LPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3205LPBF.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins
3

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
110A Tc

Drive Voltage (Max Rds On, Min Rds On)
10V

Number of Elements
1

Power Dissipation (Max)
200W Tc

Type
Parameter

Turn Off Delay Time
50 ns

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2002

JESD-609 Code
e3

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Download datasheets and manufacturer documentation for INFINEON IRF3205LPBF.

IRF3205LPBF Overview

An avalanche break down occurs, and the applied energy is called avalanche energy, with a rating of 264 mJ Avalanche energy.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3247pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 110A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Drain current refers to the maximum continuous current a device can conduct, and it is 75A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.

IRF3205LPBF Features

the avalanche energy rating (Eas) is 264 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
a threshold voltage of 4V