INFINEON IRF3000PBF
Manufacturer No:
IRF3000PBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 960mA, 10V ±30V 730pF @ 25V 33nC @ 10V 300V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :9653
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF3000PBF Information
INFINEON IRF3000PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3000PBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 300V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 1.6A
- Power Dissipation-Max
- 2.5W Ta
- Power Dissipation
- 2.5W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 960mA, 10V
Download datasheets and manufacturer documentation for INFINEON IRF3000PBF.
Other Related Documents:
ConflictMineralStatement:
IRF3000PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 730pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 300V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 300V.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF3000PBF Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 300V voltage
a 300V drain to source voltage (Vdss)
IRF3000PBF Applications
There are a lot of Infineon Technologies
IRF3000PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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