INFINEON IRF3000
Manufacturer No:
IRF3000
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 960mA, 10V ±30V 730pF @ 25V 33nC @ 10V 300V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :9006
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF3000 Information
INFINEON IRF3000 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF3000.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 2.5W Ta
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 730pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- Drain to Source Voltage (Vdss)
- 300V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for INFINEON IRF3000.
Other Related Documents:
IRF3000 Description
IRF3000 is a 300V N-MOSFET HEXFET MOSFET. The IRF3000 can replace electromechanical relays in many telecommunications and networking applications. As it is a solid-state semiconductor device with no mechanical parts, it increases the reliability of the entire system while being 30% smaller than an electromechanical relay.
The IRF3000 is more efficient than electromechanical relays, with an open-state resistance 90% lower than electromechanical relays, minimizing conduction losses. The ultra-low gate charge in turn minimizes switching losses. The IRF3000 is easier to drive than an electromechanical relay, simplifying the circuit and reducing system costs.
IRF3000 Features
Type Designator: IRF3000
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7.2 nS
Drain-Source Capacitance (Cd): 940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: SO8
IRF3000 Applications
High-frequency DC-DC converters
DC to DC Converter
Switched Mode Power Supplies
Motor Drivers
Battery charger circuits
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