INFINEON IRF2804STRR7PP

Manufacturer No:

IRF2804STRR7PP

Manufacturer:

INFINEON

Package:

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.6mOhm @ 160A, 10V ±20V 6930pF @ 25V 260nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Quantity:

In Stock :9169

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF2804STRR7PP Information

INFINEON IRF2804STRR7PP technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF2804STRR7PP.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Number of Pins
3

Supplier Device Package
D2PAK (7-Lead)

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2005

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
330W Tc

Element Configuration
Single

Power Dissipation
330W

Turn On Delay Time
13 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.6mOhm @ 160A, 10V

Download datasheets and manufacturer documentation for INFINEON IRF2804STRR7PP.

Datasheets:

infineontechnologies-irf2804strl7pp-datasheets-6651.pdf

infineon-irf2804strr7pp-datasheets-3737.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF2804STRR7PP Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6930pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 130 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 2mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF2804STRR7PP Features

a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
single MOSFETs transistor is 2mOhm
a 40V drain to source voltage (Vdss)