INFINEON IRF2804STRR

Manufacturer No:

IRF2804STRR

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2m ? @ 75A, 10V ±20V 6450pF @ 25V 240nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :3078

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF2804STRR Information

INFINEON IRF2804STRR technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF2804STRR.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2003

JESD-609 Code
e3

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for INFINEON IRF2804STRR.

IRF2804STRR Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 540 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6450pF @ 25V.75A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1080A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (10V) reduces this device's overall power consumption.