

INFINEON IRF2804STRLPBF
Manufacturer No:
IRF2804STRLPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2m ? @ 75A, 10V ±20V 6450pF @ 25V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :7337
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IRF2804STRLPBF Information
INFINEON IRF2804STRLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF2804STRLPBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2003
- Type
- Parameter
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Resistance
- 2MOhm
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 40V
Download datasheets and manufacturer documentation for INFINEON IRF2804STRLPBF.
Other Related Documents:
PCN Design/Specification:
PCN Packaging:
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IRF2804STRLPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 540 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6450pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Drain current refers to the maximum continuous current a device can conduct, and it is 270A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 130 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF2804STRLPBF Features
the avalanche energy rating (Eas) is 540 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
a threshold voltage of 4V
IRF2804STRLPBF Applications
There are a lot of Infineon Technologies
IRF2804STRLPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
IRF2804STRLPBF Relevant information
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