

INFINEON IRF2804SPBF
Manufacturer No:
IRF2804SPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 2m ? @ 75A, 10V ±20V 6450pF @ 25V 240nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :6041
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF2804SPBF Information
INFINEON IRF2804SPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF2804SPBF.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2003
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 300W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 2m ? @ 75A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 6450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 75A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 240nC @ 10V
- Drain to Source Voltage (Vdss)
- 40V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
Download datasheets and manufacturer documentation for INFINEON IRF2804SPBF.
Other Related Documents:
PCN Design/Specification:
PCN Packaging:
IRF2804SPBF Description
The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of other applications.
IRF2804SPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRF2804SPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF2804SPBF Relevant information
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