INFINEON IRF2804LPBF

Manufacturer No:

IRF2804LPBF

Manufacturer:

INFINEON

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 2.3m ? @ 75A, 10V 6450pF @ 25V 240nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

In Stock :6260

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IRF2804LPBF Information

INFINEON IRF2804LPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF2804LPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2003

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE

Subcategory
FET General Purpose Power

Voltage - Rated DC
40V

Technology
MOSFET (Metal Oxide)

Download datasheets and manufacturer documentation for INFINEON IRF2804LPBF.

IRF2804LPBF Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 540 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6450pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.

IRF2804LPBF Features

the avalanche energy rating (Eas) is 540 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
a threshold voltage of 4V