INFINEON IRF1010ZS

Manufacturer No:

IRF1010ZS

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tube 7.5m ? @ 75A, 10V ±20V 2840pF @ 25V 95nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :5524

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 9 - Sun, May 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF1010ZS Information

INFINEON IRF1010ZS technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF1010ZS.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2003

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
2

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Download datasheets and manufacturer documentation for INFINEON IRF1010ZS.

IRF1010ZS Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 130 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2840pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.There is a peak drain current of 360A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).