

INFINEON IRF1010ZLPBF
Manufacturer No:
IRF1010ZLPBF
Manufacturer:
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 7.5m ? @ 75A, 10V ±20V 2840pF @ 25V 95nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:


In Stock :3886
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Step1:Prepare product

Step2:Desiccant Protection

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Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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IRF1010ZLPBF Information
INFINEON IRF1010ZLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF1010ZLPBF.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins
- 3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Voltage - Rated DC
- 55V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 75A
- Number of Elements
- 1
- Power Dissipation-Max
- 140W Tc
- Power Dissipation
- 140W
- Turn On Delay Time
- 18 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 7.5m ? @ 75A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
Download datasheets and manufacturer documentation for INFINEON IRF1010ZLPBF.
Other Related Documents:
ConflictMineralStatement:
IRF1010ZLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2840pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1010ZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZLPBF Applications
There are a lot of Infineon Technologies
IRF1010ZLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IRF1010ZLPBF Relevant information
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