INFINEON IRF1010Z

Manufacturer No:

IRF1010Z

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 7.5m ? @ 75A, 10V ±20V 2840pF @ 25V 95nC @ 10V 55V TO-220-3

Quantity:

In Stock :7925

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Sat, May 9 - Sun, May 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF1010Z Information

INFINEON IRF1010Z technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF1010Z.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Surface Mount
NO

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2003

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PSFM-T3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
140W Tc

Download datasheets and manufacturer documentation for INFINEON IRF1010Z.

IRF1010Z Description

IRF1010Z is a kind of HEXFET? power MOSFET that is designed based on advanced processing technology for the purpose of making extremely low on-resistance per silicon area possible. Moreover, Power MOSFET IRF1010Z is capable of providing a fast switching speed, improved repetitive avalanche rating, and a 175??C junction operating temperature. All of these make the device more efficient and reliable for use in a wide range of applications.