

INFINEON IRF1010EZPBF
Manufacturer No:
IRF1010EZPBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 8.5m ? @ 51A, 10V ±20V 2810pF @ 25V 86nC @ 10V TO-220-3
Quantity:


In Stock :2653
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF1010EZPBF Information
INFINEON IRF1010EZPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF1010EZPBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 8.5MOhm
- Additional Feature
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 75A
Download datasheets and manufacturer documentation for INFINEON IRF1010EZPBF.
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
IRF1010EZPBF Description
To produce exceptionally low on-resistance per silicon area, the IRF1010EZPBF HEXFET? Power MOSFET employs the most advanced processing techniques. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.
IRF1010EZPBF Features
Lead-Free
Fast Switching
Dynamic dv/dt Rating
Ultra-Low On-Resistance
175°C Operating Temperature
Advanced Process Technology
Repetitive Avalanche Allowed up to Tjmax
IRF1010EZPBF Applications
AC-DC
Automotive
Power management
IRF1010EZPBF Relevant information
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