INFINEON IRF100P218AKMA1
Manufacturer No:
IRF100P218AKMA1
Manufacturer:
Package:
TO-247-3
Description:
N-Channel Tube 1.28mOhm @ 100A, 10V ±20V 24000 pF @ 50 V 412 nC @ 10 V 100 V TO-247-3
Quantity:
In Stock :6750
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IRF100P218AKMA1 Information
INFINEON IRF100P218AKMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF100P218AKMA1.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- PG-TO247-3
- Mounting Style
- Through Hole
- Mfr
- Infineon Technologies
- Package
- Tube
- Product Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Power Dissipation (Max)
- 3.8W (Ta), 556W (Tc)
- Continuous Drain Current Id
- 209
- Type
- Parameter
- Transistor Polarity
- N-Channel
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Channel Mode
- Enhancement
- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Series
- StrongIRFET?
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Packaging
- Tube
- Subcategory
- MOSFETs
Download datasheets and manufacturer documentation for INFINEON IRF100P218AKMA1.
Product Description
The IRF100P218AKMA1 is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies. This device is designed for high-current, high-voltage applications, offering excellent switching performance and reliability. With a maximum power dissipation of 556W and a continuous drain current of 209A, this MOSFET is suitable for a wide range of applications, including power supplies, motor control, and industrial automation.
Features
- High-power N-channel MOSFET with a maximum power dissipation of 556W
- Continuous drain current of 209A at 25°C
- Drain-to-source voltage of 100V
- Gate-source voltage of ±20V
- Gate charge of 412nC at 10V
- Input capacitance of 24,000pF at 50V
- Rds(on) of 1.28mΩ at 100A and 10V
- Operating temperature range of -55°C to 175°C
Applications
- Power supplies
- Motor control
- Industrial automation
- Renewable energy systems
- Automotive applications
Alternative Parts
- IRF100P218 SP005537804 (same part number with different packaging)
- Other N-channel MOSFETs from Infineon Technologies or other manufacturers
Embedded Modules
- This MOSFET is used in various embedded modules, including:
- Power supplies
- Motor control systems
- Industrial automation systems
FAQs
Q: What is the maximum power dissipation of the IRF100P218AKMA1? A: The maximum power dissipation is 556W.
Q: What is the continuous drain current of the IRF100P218AKMA1? A: The continuous drain current is 209A at 25°C.
Q: What is the drain-to-source voltage of the IRF100P218AKMA1? A: The drain-to-source voltage is 100V.
Q: What is the gate-source voltage of the IRF100P218AKMA1? A: The gate-source voltage is ±20V.
Q: What is the operating temperature range of the IRF100P218AKMA1? A: The operating temperature range is -55°C to 175°C.
IRF100P218AKMA1 Relevant information
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