INFINEON IPW65R280E6FKSA1

Manufacturer No:

IPW65R280E6FKSA1

Manufacturer:

INFINEON

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 280m ? @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-247-3

Quantity:

In Stock :4395

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPW65R280E6FKSA1 Information

INFINEON IPW65R280E6FKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPW65R280E6FKSA1.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
CoolMOS?

Published
2008

JESD-609 Code
e3

Type
Parameter

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

Download datasheets and manufacturer documentation for INFINEON IPW65R280E6FKSA1.

Datasheets:

infineontechnologies-ipw65r280e6fksa1-datasheets-5235.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IPW65R280E6FKSA1 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 950pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13.8A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 76 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 39A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

IPW65R280E6FKSA1 Features

the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 76 ns
based on its rated peak drain current 39A.