

INFINEON IPW65R280C6FKSA1
Manufacturer No:
IPW65R280C6FKSA1
Manufacturer:
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 280m ? @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-247-3
Quantity:


In Stock :1522
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Step1:Prepare product

Step2:Desiccant Protection

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Step6:Packaging Box
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IPW65R280C6FKSA1 Information
INFINEON IPW65R280C6FKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPW65R280C6FKSA1.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS?
- Published
- 2009
- JESD-609 Code
- e3
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for INFINEON IPW65R280C6FKSA1.
Datasheets:
Other Related Documents:
ConflictMineralStatement:
IPW65R280C6FKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 950pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 105 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 39A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPW65R280C6FKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 105 ns
based on its rated peak drain current 39A.
IPW65R280C6FKSA1 Applications
There are a lot of Infineon Technologies
IPW65R280C6FKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IPW65R280C6FKSA1 Relevant information
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