INFINEON IPW60R190C6XK

Manufacturer No:

IPW60R190C6XK

Manufacturer:

INFINEON

Package:

Description:

650 V

Quantity:

In Stock :8916

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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Step4：Individual Package

Step5：Anti-collision Filling

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPW60R190C6XK Information

INFINEON IPW60R190C6XK technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPW60R190C6XK.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Through Hole

Surface Mount
NO

Number of Pins
3

Number of Terminals
3

Transistor Element Material
SILICON

Continuous Drain Current Id
20.2

Turn-On Delay Time
15 ns

RoHS Status
RoHS Compliant

Package Shape
RECTANGULAR

Type
Parameter

Manufacturer
Infineon Technologies AG

ECCN Code
EAR99

Max Operating Temperature
150 °C

Min Operating Temperature
-55 °C

Terminal Position
SINGLE

Terminal Form
THROUGH-HOLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
compliant

JESD-30 Code
R-PSFM-T3

Number of Elements
1

Download datasheets and manufacturer documentation for INFINEON IPW60R190C6XK.

IPW60R190C6XK Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 418 mJ.This device conducts a continuous drain current (ID) of 20.2 A, which is the maximum continuous current transistor can conduct.Using VGS=600 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600 V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 59 A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 170 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20 V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 650 V.

IPW60R190C6XK Features

the avalanche energy rating (Eas) is 418 mJ
a continuous drain current (ID) of 20.2 A
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 59 A.
single MOSFETs transistor is 170 mΩ
a 650 V drain to source voltage (Vdss)