INFINEON IPW60R125CPFKSA1
INFINEON IPW60R125CPFKSA1

INFINEON IPW60R125CPFKSA1

Manufacturer No:

IPW60R125CPFKSA1

Manufacturer:

INFINEON

Package:

TO-247-3

Description:

N-Channel Tube 125m Ω @ 16A, 10V ±20V 2500pF @ 100V 70nC @ 10V TO-247-3

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In Stock :7725

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Shipped from:HK Warehouse
Expected Shipping:Sun, May 10 - Mon, May 11, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPW60R125CPFKSA1 Information

INFINEON IPW60R125CPFKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPW60R125CPFKSA1.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-247-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Current - Continuous Drain (Id) @ 25℃
  • 25A Tc
  • Drive Voltage (Max Rds On, Min Rds On)
  • 10V
  • Number of Elements
  • 1
  • Power Dissipation (Max)
  • 208W Tc
  • Turn Off Delay Time
  • 50 ns
  • Type
  • Parameter
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tube
  • Series
  • CoolMOS™
  • Published
  • 2011
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Not For New Designs
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99

Download datasheets and manufacturer documentation for INFINEON IPW60R125CPFKSA1.

IPW60R125CPFKSA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 708 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 82A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.

IPW60R125CPFKSA1 Features


the avalanche energy rating (Eas) is 708 mJ
a continuous drain current (ID) of 25A
based on its rated peak drain current 82A.


IPW60R125CPFKSA1 Applications


There are a lot of Infineon Technologies
IPW60R125CPFKSA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools