INFINEON IPW60R075CPXK

Manufacturer No:

IPW60R075CPXK

Manufacturer:

INFINEON

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel 75mOhm @ 26A, 10V ±20V 4000 pF @ 100 V 116 nC @ 10 V 600 V TO-247-3

Quantity:

In Stock :9103

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IPW60R075CPXK Information

INFINEON IPW60R075CPXK technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPW60R075CPXK.

Type
Parameter

Factory Lead Time
1 Week

Mounting Type
Through Hole

Package / Case
TO-247-3

Surface Mount
NO

Supplier Device Package
PG-TO247-3-41

Number of Terminals
3

Transistor Element Material
SILICON

Package
Bulk

Drive Voltage (Max Rds On, Min Rds On)
10V

Mfr
Infineon Technologies

Type
Parameter

Power Dissipation (Max)
313W (Tc)

Product Status
Active

Package Shape
RECTANGULAR

Manufacturer
Infineon Technologies AG

Operating Temperature
-55°C ~ 150°C (TJ)

Series
CoolMOS™

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
THROUGH-HOLE

Reach Compliance Code
compliant

Download datasheets and manufacturer documentation for INFINEON IPW60R075CPXK.

IPW60R075CPXK Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4000 pF @ 100 V.There is a peak drain current of 130 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600 V drain to source voltage (Vdss) in order to function.