INFINEON IPP80N04S2H4AKSA1
Manufacturer No:
IPP80N04S2H4AKSA1
Manufacturer:
INFINEON
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 4m ? @ 80A, 10V ±20V 4400pF @ 25V 148nC @ 10V 40V TO-220-3
Quantity:
In Stock :9596
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPP80N04S2H4AKSA1 Information
INFINEON IPP80N04S2H4AKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPP80N04S2H4AKSA1.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- OptiMOS?
- Published
- 2008
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
Download datasheets and manufacturer documentation for INFINEON IPP80N04S2H4AKSA1.
Other Related Documents:
IPP80N04S2H4AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 660 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4400pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 80A.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP80N04S2H4AKSA1 Features
the avalanche energy rating (Eas) is 660 mJ
based on its rated peak drain current 320A.
a 40V drain to source voltage (Vdss)
IPP80N04S2H4AKSA1 Applications
There are a lot of Infineon Technologies
IPP80N04S2H4AKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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