INFINEON IPP50R399CPXKSA1

Manufacturer No:

IPP50R399CPXKSA1

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 399m ? @ 4.9A, 10V ±20V 890pF @ 100V 4nC @ 10V TO-220-3

Quantity:

In Stock :2467

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Expected Shipping：Sun, May 17 - Mon, May 18, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IPP50R399CPXKSA1 Information

INFINEON IPP50R399CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPP50R399CPXKSA1.

Type
Parameter

Factory Lead Time
8 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
CoolMOS?

Published
2008

Type
Parameter

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Tin (Sn)

Subcategory
FET General Purpose Powers

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Download datasheets and manufacturer documentation for INFINEON IPP50R399CPXKSA1.

Datasheets:

infineontechnologies-ipp50r399cpxksa1-datasheets-7949.pdf

infineon-ipp50r399cpxksa1-datasheets-8153.pdf

infineon-ipp50r399cpxksa1-datasheets-8154.pdf

infineon-ipp50r399cpxksa1-datasheets-8155.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IPP50R399CPXKSA1 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 215 mJ.A device's maximum input capacitance is 890pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 500V, it supports maximum dual supply voltages.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPP50R399CPXKSA1 Features

the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 20A.
a threshold voltage of 3V