INFINEON IPL65R725CFDAUMA1
Manufacturer No:
IPL65R725CFDAUMA1
Manufacturer:
INFINEON
Package:
4-PowerTSFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 725m ? @ 2.1A, 10V ±20V 615pF @ 100V 20nC @ 10V 4-PowerTSFN
Quantity:
In Stock :4798
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPL65R725CFDAUMA1 Information
INFINEON IPL65R725CFDAUMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPL65R725CFDAUMA1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 4-PowerTSFN
- Number of Pins
- 4
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- CoolMOS?
- Published
- 2013
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Channels
- 2
- Power Dissipation-Max
- 62.5W Tc
- Turn On Delay Time
- 9 ns
Download datasheets and manufacturer documentation for INFINEON IPL65R725CFDAUMA1.
Datasheets:
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IPL65R725CFDAUMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 615pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In addition to 650V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPL65R725CFDAUMA1 Features
a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 40 ns
IPL65R725CFDAUMA1 Applications
There are a lot of Infineon Technologies
IPL65R725CFDAUMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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12.28 M
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