INFINEON IPI80N06S3L-08
Manufacturer No:
IPI80N06S3L-08
Manufacturer:
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 7.9m ? @ 43A, 10V ±16V 6475pF @ 25V 134nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
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IPI80N06S3L-08 information
INFINEON IPI80N06S3L-08 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPI80N06S3L-08.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- OptiMOS?
- Published
- 2007
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 55V
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 80A
- Time@Peak Reflow Temperature-Max (s)
- 40
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
- Qualification Status
- Not Qualified
- Power Dissipation-Max
- 105W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 105W
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 7.9m ? @ 43A, 10V
- Vgs(th) (Max) @ Id
- 2.2V @ 55?A
- Input Capacitance (Ciss) (Max) @ Vds
- 6475pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 80A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 134nC @ 10V
- Rise Time
- 35ns
- Drive Voltage (Max Rds On,Min Rds On)
- 5V 10V
- Vgs (Max)
- ±16V
- Fall Time (Typ)
- 25 ns
- Turn-Off Delay Time
- 39 ns
- Continuous Drain Current (ID)
- 80A
- Gate to Source Voltage (Vgs)
- 16V
- Drain-source On Resistance-Max
- 0.0079Ohm
- Drain to Source Breakdown Voltage
- 55V
- Pulsed Drain Current-Max (IDM)
- 320A
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for INFINEON IPI80N06S3L-08.
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IPI80N06S3L-08 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6475pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 39 ns.Peak drain current is 320A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
IPI80N06S3L-08 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 320A.
IPI80N06S3L-08 Applications
There are a lot of Infineon Technologies
IPI80N06S3L-08 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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