INFINEON IPI60R190C6XKSA1
Manufacturer No:
IPI60R190C6XKSA1
Manufacturer:
INFINEON
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 190m ? @ 9.5A, 10V ±20V 1400pF @ 100V 63nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :3215
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPI60R190C6XKSA1 Information
INFINEON IPI60R190C6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPI60R190C6XKSA1.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS?
- Published
- 2008
- JESD-609 Code
- e3
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
Download datasheets and manufacturer documentation for INFINEON IPI60R190C6XKSA1.
Other Related Documents:
IPI60R190C6XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 418 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 20.2A.Pulsed drain current is maximum rated peak drain current 59A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPI60R190C6XKSA1 Features
the avalanche energy rating (Eas) is 418 mJ
based on its rated peak drain current 59A.
a 600V drain to source voltage (Vdss)
IPI60R190C6XKSA1 Applications
There are a lot of Infineon Technologies
IPI60R190C6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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