

INFINEON IPD60R460CEATMA1
Manufacturer No:
IPD60R460CEATMA1
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 460m ? @ 3.4A, 10V ±20V 620pF @ 100V 28nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:


In Stock :4793
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IPD60R460CEATMA1 Information
INFINEON IPD60R460CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPD60R460CEATMA1.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Weight
- 3.949996g
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- CoolMOS? CE
- Published
- 2014
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 3 (168 Hours)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
Download datasheets and manufacturer documentation for INFINEON IPD60R460CEATMA1.
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IPD60R460CEATMA1 Overview
A device's maximal input capacitance is 620pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9.1A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 26A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPD60R460CEATMA1 Features
a continuous drain current (ID) of 9.1A
the turn-off delay time is 70 ns
based on its rated peak drain current 26A.
a 600V drain to source voltage (Vdss)
IPD60R460CEATMA1 Applications
There are a lot of Infineon Technologies
IPD60R460CEATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
IPD60R460CEATMA1 Relevant information
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