IPD170N04NGBTMA1-INFINEON-Price, Stock & Datasheet

IPD170N04NGBTMA1 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 5 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 880pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7 ns.Peak drain current for this device is 210A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (10V) reduces this device's overall power consumption.

IPD170N04NGBTMA1 Features

the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 7 ns
based on its rated peak drain current 210A.
a 40V drain to source voltage (Vdss)